FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD AND CLEANING METHOD

• Main Authors: SONODA KAZUHIRO, YAMADA KIICHI, KATO NOBUYUKI, HATANAKA MASANOBU, HONDA KAZUHIRO, LI JIANCHANG
• Format: Patent
• Language: English; Japanese
• Published: 09.01.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To reduce a generation of a damage by cleaning and reduce a generation of a particle attributed to cleaning.SOLUTION: A film deposition apparatus has a film deposition chamber 11 accommodating a substrate S, a gas diffusion part 21 connected to the film deposition chamber, a nozzle 22 ejecting gas to the gas diffusion part, and a valve 23 arranged in the gas diffusion part. When the valve is closed to deposit a film, raw material gas can be ejected from the nozzle to the gas diffusion part, when the valve is open for cleaning, a first cleaning gas can be fed to the gas diffusion part from the valve, and a second cleaning gas can be ejected from the nozzle to the gas diffusion part in cleaning.SELECTED DRAWING: Figure 2 【課題】クリーニングによるダメージ発生を低減し、クリーニングに起因するパーティクル発生を低減する。【解決手段】基板Ｓを収納する成膜室１１と、成膜室に接続されたガス拡散部２１と、ガス拡散部にガスを噴出するノズル２２と、ガス拡散部に設けられたバルブ２３と、を有し、バルブ閉とされた成膜時に、ガス拡散部にノズルから原料ガスを噴出可能、バルブ開とされたクリーニング時にバルブから第１クリーニングガスをガス拡散部に供給可能とされ、クリーニング時に第２クリーニングガスをノズルからガス拡散部に噴出可能とされる。【選択図】図２