METHOD OF FORMING ALUMINUM FILM

• Main Author: TOKURA YUJI
• Format: Patent
• Language: English; Japanese
• Published: 26.12.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique for forming an aluminum film having high flatness and reduced cavities.SOLUTION: In step S11, a material of an aluminum film is sputtered on a substrate to form a first film having a thickness of 0.1 μm or more and less than 1 μm. In step S12, the first film is heated to reflow the first film. In step S13, the above-mentioned material is sputtered on the reflowed first film to form a second film. In step S14, the second film is heated to reflow the second film. In step S15, the above-mentioned material is sputtered on the reflowed second film to form a third film. In step S16, the third film is heated to reflow the third film.SELECTED DRAWING: Figure 1 【課題】平坦性が高く、空洞が低減されるアルミニウム膜を形成する技術を提供する。【解決手段】ステップＳ１１において、基板に対してアルミニウム膜の材料をスパッタリングして０．１μｍ以上１μｍ未満の厚さを有する第１膜を形成する。ステップＳ１２において、第１膜を加熱して第１膜をリフローする。ステップＳ１３において、リフロー後の第１膜に対して上述の材料をスパッタリングして第２膜を形成する。ステップＳ１４において、第２膜を加熱して第２膜をリフローする。ステップＳ１５において、リフロー後の第２膜に対して上述の材料をスパッタリングして第３膜を形成する。ステップＳ１６において、第３膜を加熱して第３膜をリフローする。【選択図】図１