RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

To provide a resist composition having good lithographic characteristics, and a resist pattern forming method using the resist composition.SOLUTION: The resist composition contains: a base component containing a resin component having a constituent unit containing a specific aromatic carboxylic acid...

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Bibliographic Details
Main Authors ARAI MASATOSHI, ONISHI KOSHI, MAEBASHI TAKAYA
Format Patent
LanguageEnglish
Japanese
Published 26.12.2019
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Summary:To provide a resist composition having good lithographic characteristics, and a resist pattern forming method using the resist composition.SOLUTION: The resist composition contains: a base component containing a resin component having a constituent unit containing a specific aromatic carboxylic acid structure substituted with an acid-dissociable group; and an acid generator component containing at least one of (b-1) to (b-3). (In the formulae, R, Rand Rare each a hydrocarbon group containing an aromatic ring; R, Rand Rare each a cyclic group, a chain alkyl group or a chain alkenyl group; Ris a fluorine atom or a C1-5 fluorinated alkyl group; V101-V103 are each independently a single bond, an alkylene group or a fluorinated alkylene group; L101-L102 are each independently a single bond or an oxygen atom; L103-L105 are each independently a single bond, -CO- or -SO2-; m is an integer of 1 or more; and M'is an m-valent onium cation.)SELECTED DRAWING: None 【課題】リソグラフィー特性が良好なレジスト組成物、及び当該レジスト組成物を用いたレジストパターン形成方法の提供。【解決手段】酸解離性基で置換された特定の芳香族カルボン酸構造を含む構成単位を有する樹脂成分を含む基材成分と、少なくとも(b−1)〜(b−3)の1種を含む酸発生剤成分とを、含有するレジスト組成物。(式中、R101、R104及びR106は、芳香環を含む炭化水素基。R105、R107及びR108は、環式基、鎖状のアルキル基又は鎖状のアルケニル基。R102はフッ素原子又は炭素数1〜5のフッ素化アルキル基。V101〜V103はそれぞれ独立に単結合、アルキレン基又はフッ素化アルキレン基。L101〜L102はそれぞれ独立に単結合又は酸素原子。L103〜L105はそれぞれ独立に単結合、−CO−又は−SO2−。mは1以上の整数であって、M'm+はm価のオニウムカチオンである。)【選択図】なし
Bibliography:Application Number: JP20180115625