MANUFACTURING METHOD OF JOINT SUBSTRATE AND JOINT SUBSTRATE

• Main Authors: KURASHIMA YUICHI, IDE KENSUKE, UCHIUMI ATSUSHI, TAKAGI HIDEKI, GOTO TAKAYUKI, SUZUKI TAKENORI
• Format: Patent
• Language: English; Japanese
• Published: 26.12.2019
• Subjects: BASIC ELECTRONIC CIRCUITRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; PERFORMING OPERATIONS; RESONATORS; SOLDERING OR UNSOLDERING; TRANSPORTING; WELDING; WORKING BY LASER BEAM

To provide a manufacturing method of a joint substrate and the joint substrate which prevents occurrence of warping upon joint of a piezoelectric substrate and a support substrate and improves a joint strength.SOLUTION: A joint substrate 20 includes a piezoelectric substrate 17 formed from a single crystal substrate of piezoelectric material of either one of lithium tantalite, lithium niobate and quartz, a support substrate 18 formed from monocrystal or polycrystal substrate of semiconductor material of either one of silicone, germanium, silicon carbide, gallium-phosphorus and gallium arsenide and a joint layer 19 formed on a surface 17A of the piezoelectric substrate 17 with amorphous semiconductor material provided by making semiconductor material of the support substrate 18 amorphous. Therein, the piezoelectric substrate 17 and the support substrate 18 are joined at normal temperature via the joint layer 19.SELECTED DRAWING: Figure 3 【課題】圧電基板と支持基板との接合時の反りの発生を防止し、接合強度の向上を図った接合基板の製造方法、及び、接合基板を提供すること。【解決手段】接合基板２０は、タンタル酸リチウム、ニオブ酸リチウム、水晶のいずれか１つの圧電材料の単結晶基板から形成される圧電基板１７と、シリコン、ゲルマニウム、炭化けい素、ガリウムリン、ガリウム砒素のいずれか１つの半導体材料の単結晶または多結晶基板から形成される支持基板１８と、支持基板１８の半導体材料を非晶質化させた非晶質半導体材料で圧電基板１７の表面１７Ａに形成される接合層１９とを備え、接合層１９を介して、圧電基板１７と支持基板１８とが常温接合される。【選択図】図３