SEMICONDUCTOR INSPECTION DEVICE AND SEMICONDUCTOR INSPECTION METHOD

To provide a technique for satisfactorily inspecting an interfacial characteristic between an insulation layer and a semiconductor layer.SOLUTION: A semiconductor inspection device 1 is a device for inspecting an interfacial characteristic between an insulation layer 92 and a semiconductor layer 90....

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Main Authors WATABE HEIJI, HOSOI TAKUJI, SHIMURA TAKAYOSHI, NISHIMURA TATSUHIKO, NAKANISHI HIDETOSHI
Format Patent
LanguageEnglish
Japanese
Published 19.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
SEMICONDUCTOR DEVICES
TESTING
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Summary:To provide a technique for satisfactorily inspecting an interfacial characteristic between an insulation layer and a semiconductor layer.SOLUTION: A semiconductor inspection device 1 is a device for inspecting an interfacial characteristic between an insulation layer 92 and a semiconductor layer 90. The semiconductor inspection device 1 includes: a voltage application part 40 for switching different gate voltages to apply the gate voltage between the insulation layer 92 and the semiconductor layer 90 of a semiconductor sample 9 held on a stage 30; a light irradiation part 10 for irradiating the semiconductor sample 9 with inspection light LP10; an electromagnetic wave detection part 20 for detecting electromagnetic wave intensity being the intensity of an electromagnetic wave LT1 irradiated in accordance with irradiation of the inspection light LP10 from the semiconductor sample 9 to which each of different gate voltages is applied; and a change amount information generation part 52 for generating change amount information 640 being information showing a change amount of the electromagnetic wave intensity from each of the electromagnetic wave intensity corresponding to the different gate voltages.SELECTED DRAWING: Figure 1 【課題】絶縁層および半導体層間の界面特性を良好に検査する技術を提供する。【解決手段】半導体検査装置１は、絶縁層９２および半導体層９０の界面特性を検査する装置である。半導体検査装置１は、ステージ３０に保持されている半導体試料９の絶縁層９２および半導体層９０間に異なるゲート電圧を切り換えて印加する電圧印加部４０と、半導体試料９に検査光ＬＰ１０を照射する光照射部１０と、異なるゲート電圧の各々が印加される半導体試料９から、検査光ＬＰ１０の照射に応じて放射される電磁波ＬＴ１の強度である電磁波強度を検出する電磁波検出部２０と、異なるゲート電圧に応じた電磁波強度の各々から、電磁波強度の変化量を示す情報である変化量情報６４０を生成する変化量情報生成部５２とを備える。【選択図】図１
Bibliography:Application Number: JP20180112904