METHOD FOR PRODUCING LITHIUM DOPED LAMINAR SILICON

To provide a novel method for producing a lithium doped laminar silicon.SOLUTION: A method for producing a lithium doped laminar silicon is provided which comprises a doping step where a laminar polysilane is brought into contact with a lithium complex solution given by dissolving a metal lithium an...

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Bibliographic Details
Main Author YUGAWA KAYOKO
Format Patent
LanguageEnglish
Japanese
Published 28.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSIONOF CHEMICAL INTO ELECTRICAL ENERGY
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Summary:To provide a novel method for producing a lithium doped laminar silicon.SOLUTION: A method for producing a lithium doped laminar silicon is provided which comprises a doping step where a laminar polysilane is brought into contact with a lithium complex solution given by dissolving a metal lithium and a polycyclic aromatic compound in an organic solvent to dope the laminar polysilane with lithium, and a heating step where the laminar polysilane having undergone the doping step is heated at 300°C or higher.SELECTED DRAWING: None 【課題】リチウムドープ層状シリコンを製造する新たな方法を提供すること。【解決手段】層状ポリシランに、金属リチウムと多環芳香族化合物とを有機溶剤に溶解したリチウム錯体溶液を接触させ、前記層状ポリシランにリチウムをドープするドープ工程と、前記ドープ工程後の前記層状ポリシランを３００℃以上で加熱する加熱工程と、を含む、リチウムドープ層状シリコンの製造方法。【選択図】なし
Bibliography:Application Number: JP20180099220