SEMICONDUCTOR LAMINATE AND LIGHT RECEIVING ELEMENT

• Main Authors: FUYUKI TAKUMA, KURE TSUYOSHI, ISHIZUKA TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 21.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor laminate that can be easily manufactured and can improve the sensitivity of a light receiving element including a semiconductor layer made of a III-V compound semiconductor and a light receiving element.SOLUTION: A semiconductor laminate 10 includes a base layer 20 having n-type conductivity, a light receiving layer 13, an adjustment layer 16 disposed in contact with the light receiving layer 13, a diffusion block layer 14 having a p-type impurity concentration of 1×10cmor less, which is an impurity that generates p-type carriers, and a contact layer 15 whose conductivity type is p-type. The base layer 20, light receiving layer 13, adjustment layer 16, diffusion block layer 14, and contact layer 15 are laminated in this order. In the adjustment layer 16, the concentration of the same element as the group V element constituting the light receiving layer 13 is lower on the main surface on the diffusion block layer 14 side than on the main surface 16A on the light receiving layer 13 side.SELECTED DRAWING: Figure 1 【課題】製造が容易であり、かつＩＩＩ−Ｖ族化合物半導体からなる半導体層を含む受光素子の感度を向上させることが可能な半導体積層体および受光素子を提供する。【解決手段】半導体積層体１０は、導電型がｎ型であるベース層２０と、受光層１３と、受光層１３に接触して配置される調整層１６と、ｐ型のキャリアを生成する不純物であるｐ型不純物の濃度が１×１０１６ｃｍ−３以下である拡散ブロック層１４と、導電型がｐ型であるコンタクト層１５と、を備える。ベース層２０、受光層１３、調整層１６、拡散ブロック層１４およびコンタクト層１５はこの順に積層される。調整層１６において、受光層１３を構成するＶ族元素と同一の元素の濃度は、受光層１３側の主面１６Ａに比べて拡散ブロック層１４側の主面において低い。【選択図】図１