LIGHT-EMITTING DIODE ELEMENT AND MANUFACTURING METHOD FOR LIGHT-EMITTING DIODE ELEMENT

• Main Authors: ONO HIROSHI, YAMASHITA MASAYA
• Format: Patent
• Language: English; Japanese
• Published: 14.11.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a flip chip type light-emitting diode element capable of reducing lateral resistance.SOLUTION: A flip chip type light-emitting diode includes a laminate structure in which a first n-type group III nitride semiconductor layer 102 whose carrier concentration is 1×10cmand more and less than 3×10cm, a second n-type group III nitride semiconductor 103 whose carrier concentration is 5×10cmand more and less than 1×10cm, a luminescent layer 104 constituted of a group III nitride semiconductor, and a p-type group III nitride semiconductor layer 105 are successively laminated. A height difference of recesses and projections of an interface between the first n-type group III nitride semiconductor layer 102 and the second n-type group III nitride semiconductor layer 103 is larger than a height difference of recesses and projections of an interface between the second n-type group III nitride semiconductor layer 103 and the luminescent layer 104.SELECTED DRAWING: Figure 2 【課題】横方向抵抗の低減を可能とするフリップチップ型の発光ダイオード素子を提供すること。【解決手段】フリップチップ型の発光ダイオード素子であって、キャリア濃度が１×１０１９ｃｍ−３以上で且つ３×１０２０ｃｍ−３未満である第一のｎ型ＩＩＩ族窒化物半導体層１０２、キャリア濃度が５×１０１７ｃｍ−３以上で且つ１×１０１９ｃｍ−３未満である第二のｎ型ＩＩＩ族窒化物半導体層１０３、ＩＩＩ族窒化物半導体で構成される発光層１０４、及び、ｐ型ＩＩＩ族窒化物半導体層１０５、が順に積層された積層体構造を備え、前記第一のｎ型ＩＩＩ族窒化物半導体層１０２と前記第二のｎ型ＩＩＩ族窒化物半導体層１０３との界面の凹凸の高低差は、前記第二のｎ型ＩＩＩ族窒化物半導体層１０３と前記発光層１０４との界面の凹凸の高低差よりも大である。【選択図】図２