TOP EMITTING SEMICONDUCTOR LIGHT EMITTING DEVICE

• Main Authors: NORBERTUS ANTONIUS MARIA SWEEGERS, BRENDAN JUDE MORAN, MARC ANDRE DE SAMBER, BASIN GRIGORIY, KENNETH VAMPOLA, MARK MELVIN BUTTERWORTH, CLARISSE MAZUIR
• Format: Patent
• Language: English; Japanese
• Published: 31.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a device emitting a large portion of light from a top face of the device without requiring removal of a growing substrate, and a manufacturing method of the same.SOLUTION: Embodiments of the present invention include a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region. A growth substrate is attached to the semiconductor structure. The growth substrate has at least one angled sidewall. A reflective layer is disposed on the angled sidewall. A majority of light extracted from the semiconductor structure and the growth substrate is extracted through a first surface of the growth substrate.SELECTED DRAWING: Figure 6 【課題】成長基板の除去を必要とすることなく、光の大部分をデバイスの頂面から発するデバイス、及びその製造方法を提供する【解決手段】本発明の実施形態は、ｎ型領域とｐ型領域との間に挟まれた発光層を含んだ半導体構造を含む。半導体構造に成長基板が付随する。成長基板は、少なくとも１つの傾斜した側壁を有する。傾斜した側壁上に反射層が配設される。半導体構造及び成長基板から取り出される光の大部分が成長基板の第１の表面を通して取り出される。【選択図】 図６