FILM FORMING METHOD AND FILM FORMING DEVICE FOR FORMING NITRIDE FILM USING MOCVD APPARATUS, AND SHOWER HEAD

• Main Authors: KUSUHARA MASAKI, TODA MASAYUKI, UMEDA MASARU
• Format: Patent
• Language: English; Japanese
• Published: 24.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide an MOCVD film forming device which is capable of stably supplying raw materials to a reaction section so that a film of nitride (such as NbN) can be formed, and which can be used for a long period, and to provide a film forming method.SOLUTION: In Fig. 3(A), reference numeral 11 designates a vaporizer; reference numeral 12 designates a heater; reference numeral 13 designates a reaction vessel; reference numeral 14 designates piping; reference numeral 15 designates a substantially conical shower nozzle; reference numeral 16 designates a gas supply port for directly supplying reaction gas to a reaction chamber (reaction vessel); and reference numeral 17 designates a film forming device including a heater.SELECTED DRAWING: Figure 3 【課題】 本発明は、窒化物（Ｎｂ３Ｎ５等）の膜を成膜することができるように、反応部への安定的な原料供給が可能であり、また長期使用が可能であるＭＯＣＶＤ用成膜装置及び成膜方法を提供することを目的とする。【解決手段】図３（Ａ）において、１１は気化器、１２はヒータ、１３は反応容器、１４は配管、１５は略円錐状のシャワーノズル、１６は反応ガスを直接、反応チャンバー（反応容器）に供給するためのガス供給口、１７はヒータを有する成膜装置である。【選択図】図３