COPPER ALLOY FOR ELECTRONIC AND ELECTRIC DEVICE, COPPER ALLY STRIPE MATERIAL FOR ELECTRONIC AND ELECTRIC DEVICE, COMPONENT FOR ELECTRONIC AND ELECTRIC DEVICE, TERMINAL, AND BUS BAR

To provide a copper alloy for electronic and electric device excellent in conductivity, strength, flexure processability, stress relaxation characteristic, castability, and punchability, and excellent in isotropy.SOLUTION: Mg and P of prescribed amount are contained, the balance consists of Cu with...

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Main Authors MATSUNAGA HIROTAKA, KAWASAKI KENICHIRO, AKISAKA YOSHITERU, MAKI KAZUMASA, MORI HIROYUKI
Format Patent
LanguageEnglish
Japanese
Published 17.10.2019
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Summary:To provide a copper alloy for electronic and electric device excellent in conductivity, strength, flexure processability, stress relaxation characteristic, castability, and punchability, and excellent in isotropy.SOLUTION: Mg and P of prescribed amount are contained, the balance consists of Cu with inevitable impurities, a relation of [Mg]+20×[P]<0.5 by mass ratio is satisfied, 0.20<(NF/(1-NF))≤0.45 is satisfied, wherein NFis percentage of one in which all 3 particle boundaries constituting particle boundary 3 heavy points are special particle boundaries, and NFis one in which 2 particle boundaries constituting particle boundary 3 heavy points are special particle boundaries and one is a random particle boundary when corresponding particle boundary with Σ29 or less is the specific particle boundary and other is the random particle boundary with a surface orthogonal to a width direction of rolling is an observation surface and interval between measurement points with orientation difference between neighboring measurement of over 15° as crystal particle boundary by analyzing a base phase by an EBSD method, and average number of a compound containing Mg and P with particle diameter of 0.1 μm or more of 0.5/μmor less.SELECTED DRAWING: None 【課題】導電性、強度、曲げ加工性、耐応力緩和特性、鋳造性及び、打ち抜き加工性に優れた電子・電気機器用銅合金を提供する。【解決手段】所定量のMg、Pを含み、残部がCuおよび不可避的不純物からなり、質量比で〔Mg〕+20×〔P〕<0.5の関係を満し、圧延の幅方向に対して直交する面を観察面として、母相をEBSD法により解析し、隣接する測定間の方位差が15°を超える測定点間を結晶粒界とし、Σ29以下の対応粒界を特殊粒界とし、それ以外をランダム粒界とした際、粒界3重点を構成する3つの粒界全てが特殊粒界であるものの割合をNFJ3とし、粒界3重点を構成する2つの粒界が特殊粒界であり、1つがランダム粒界であるものの割合をNFJ2としたとき、0.20<(NFJ2/(1−NFJ3))0.5≦0.45が成り立ち、粒径0.1μm以上のMgとPを含有する化合物の平均個数が0.5個/μm2以下とされている。【選択図】なし
Bibliography:Application Number: JP20180069096