PROCESS AND DEVICE FOR PREPARING HETERO STRUCTURE HAVING STRAIN REDUCED BY EXPANSION IN RADIAL DIRECTION

• Main Authors: VLADIMIR V VORONKOV, JOHN A PITNEY, ROBERT J FALSTER, ALBRECHT PETER D
• Format: Patent
• Language: English; Japanese
• Published: 17.10.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide a process for reducing strain, when allowing hetero epitaxial growth (especially, formation of a silicon germanium layer on silicon) on a substrate.SOLUTION: A process for preparing a hetero structure includes a step for forming a dislocation source layer in a substrate before or after hetero layer formation, forming (activating) dislocation by expanding the hetero structure in a radial direction, and sliding dislocation toward a surface layer from the dislocation source layer. The dislocation source layer is formed by subjecting a substrate rear surface to wrapping, sand blast or ion implantation.SELECTED DRAWING: Figure 2 【課題】基板上にヘテロエピタキシャル成長（特にシリコン上へのシリコンゲルマニウム層形成）させる際に、歪を低減させるプロセスの提供。【解決手段】ヘテロ層形成前もしくは後に、基板中に転位源層を形成し、ヘテロ構造を半径方向に拡張して転位を形成（活性化）させ、転位源層から表面層に向かって転位を滑らせる工程を含む。転位源層は、基板裏面をラッピング、サンドブラスト、もしくはイオン注入することにより形成する。【選択図】図２