ETCHANT
To provide an etchant arranged so as to suppress the damage to IGZO.SOLUTION: An etchant comprises hydroxyethane diphosphonic acid, phosphonic acid, hydrogen peroxide, nitric acid, a fluorine compound, azole and alkaline. The phosphonic acid contains one or more kinds selected from a group consistin...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
10.10.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide an etchant arranged so as to suppress the damage to IGZO.SOLUTION: An etchant comprises hydroxyethane diphosphonic acid, phosphonic acid, hydrogen peroxide, nitric acid, a fluorine compound, azole and alkaline. The phosphonic acid contains one or more kinds selected from a group consisting of diethylenetriamine pentamethylenephosphonic acid, N,N,N',N'-ethylenediaminetetrakis methylenephosphonic acid and aminotrimethylenephosphonic acid. The proportion of the hydroxyethane diphosphonic acid is in a range of 0.01-0.1 mass%. The proportion of the phosphonic acid is in a range of 0.003-0.04 mass%.SELECTED DRAWING: Figure 3
【課題】IGZOへのダメージを抑制したエッチング液を提供する。【解決手段】エッチング液は、ヒドロキシエタンジホスホン酸、ホスホン酸、過酸化水素、硝酸、フッ素化合物、アゾール及びアルカリを含有するエッチング液であって、前記ホスホン酸が、ジエチレントリアミンペンタメチレンホスホン酸、N,N,N',N'−エチレンジアミンテトラキスメチレンホスホン酸及びアミノトリメチレンホスホン酸からなる群より選択される1種以上を含む。前記ヒドロキシエタンジホスホン酸の割合が0.01〜0.1質量%の範囲であり、前記ホスホン酸の割合が0.003〜0.04質量%の範囲である。【選択図】図3 |
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Bibliography: | Application Number: JP20180240569 |