SEMICONDUCTOR DEVICE

• Main Author: MIYAIRI HIDEKAZU
• Format: Patent
• Language: English; Japanese
• Published: 03.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

To provide a semiconductor device that is suitable for microfabrication and high density.SOLUTION: A semiconductor device comprises: a first transistor; a second transistor overlapped with the first transistor; a capacitive element overlapped with the second transistor; and first wiring electrically connected with the capacitive element. The first wiring has a region overlapped with an electrode of the second transistor. The first transistor, the second transistor and the capacitive element are electrically connected with each other. A channel of the first transistor has a single crystal semiconductor. A channel of the second transistor has an oxide semiconductor.SELECTED DRAWING: Figure 1 【課題】微細化・高密度化に適した半導体装置を提供すること。【解決手段】第１のトランジスタと、第１のトランジスタと互いに重なる第２のトランジスタと、第２のトランジスタと互いに重なる容量素子と、容量素子と電気的に接続する第１の配線と、を有し、第１の配線は、第２のトランジスタの電極と互いに重なる領域を有し、第１のトランジスタと、第２のトランジスタと、容量素子とは電気的に接続し、第１のトランジスタのチャネルは、単結晶半導体を有し、第２のトランジスタのチャネルは、酸化物半導体を有する。【選択図】図１