SEMICONDUCTOR DEVICE
To provide a semiconductor device that is suitable for microfabrication and high density.SOLUTION: A semiconductor device comprises: a first transistor; a second transistor overlapped with the first transistor; a capacitive element overlapped with the second transistor; and first wiring electrically...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
03.10.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a semiconductor device that is suitable for microfabrication and high density.SOLUTION: A semiconductor device comprises: a first transistor; a second transistor overlapped with the first transistor; a capacitive element overlapped with the second transistor; and first wiring electrically connected with the capacitive element. The first wiring has a region overlapped with an electrode of the second transistor. The first transistor, the second transistor and the capacitive element are electrically connected with each other. A channel of the first transistor has a single crystal semiconductor. A channel of the second transistor has an oxide semiconductor.SELECTED DRAWING: Figure 1
【課題】微細化・高密度化に適した半導体装置を提供すること。【解決手段】第1のトランジスタと、第1のトランジスタと互いに重なる第2のトランジスタと、第2のトランジスタと互いに重なる容量素子と、容量素子と電気的に接続する第1の配線と、を有し、第1の配線は、第2のトランジスタの電極と互いに重なる領域を有し、第1のトランジスタと、第2のトランジスタと、容量素子とは電気的に接続し、第1のトランジスタのチャネルは、単結晶半導体を有し、第2のトランジスタのチャネルは、酸化物半導体を有する。【選択図】図1 |
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Bibliography: | Application Number: JP20190114529 |