SEMICONDUCTOR STORAGE DEVICE

• Main Authors: IIJIMA JUN, TAGAMI MASAYOSHI, NISHIMURA TAKAHITO, USUI TAKAMASA
• Format: Patent
• Language: English; Japanese
• Published: 03.10.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device capable of suppressing reduction in formation density of memory cells, and of improving electric characteristics.SOLUTION: A semiconductor storage device comprises a substrate, a laminate, a plurality of columnar parts CL, a plurality of connection parts 40, and a plurality of wirings BL. The plurality of wirings extend in a first direction parallel to an upper surface of the substrate. When seen from a second direction perpendicular to a lamination direction of the laminate and to the first direction, a part of the first connection part connected with the first wiring, among the plurality of wirings is overlapped with a part of the second connection part connected with the second wiring adjacent to the first wiring in the second direction.SELECTED DRAWING: Figure 2 【課題】メモリセルが形成される密度の低下を抑制し、電気特性が向上した半導体記憶装置を提供する。【解決手段】実施形態に係る半導体記憶装置は、基板と、積層体と、複数の柱状部ＣＬと、複数の接続部４０と、複数の配線ＢＬと、を備える。前記複数の配線は、前記基板の上面に平行な第１方向に延びる。前記積層体の積層方向及び前記第１方向に垂直な第２方向から見たときに、前記複数の配線のうちの第１の配線に接続される第１接続部の一部は、前記第１配線と前記第２方向に隣接する第２配線に接続される第２接続部の一部と重なる。【選択図】図２