SELECTIVE DEPOSITION BY SURFACE TREATMENT

• Main Authors: SUBHADEEP KAL, KANDABARA N TAPILY, HAKAMADA TAKAHIRO, GERRIT J LEUSINK, YU KAI-HUNG
• Format: Patent
• Language: English; Japanese
• Published: 26.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a method for selectively depositing on different materials by using surface treatment.SOLUTION: A method according to an embodiment includes providing a substrate including a first material layer having a first surface and a second material layer having a second surface, modifying the second surface by exposing the substrate to a process gas including a hydrophobic functional group, which includes replacing and modifying the hydroxyl group on the second surface with the hydrophobic functional group, and selectively depositing a metal-containing layer on the first surface, rather than on the modified second surface by exposing the substrate to a deposition gas.SELECTED DRAWING: Figure 1D 【課題】 本発明の実施形態は、表面処理を用いて異なる材料に選択的に堆積させる方法を提供する。【解決手段】 一実施形態によれば、当該方法は、第１の表面を有する第１の材料層と、第２の表面を有する第２の材料層と、を含む基板を提供するステップと、を含む。当該方法はさらに、疎水性官能基を含むプロセスガスに暴露することによって前記第２の表面を改質するステップであって、前記第２の表面の上のヒドロキシル基を前記疎水性官能基で置換する、改質するステップと、前記基板を堆積ガスに暴露することによって、改質された第２の表面の上ではなく、前記第１の表面の上に金属含有層を選択的に堆積するステップと、を含む。【選択図】 図１Ｄ