IMAGING APPARATUS

• Main Authors: ENDO YASUYUKI, KOYANAGI TAKAHIRO, TOMEKAWA YUKO, AMIKAWA HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 26.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To provide an imaging apparatus which is reduced in noise and has a wide dynamic range.SOLUTION: The imaging apparatus includes a semiconductor substrate 120, a first photoelectric conversion part which is arranged in the semiconductor substrate 120, a second photoelectric conversion part which is arranged in the semiconductor substrate 120 and different from the first photoelectric conversion part, a wiring layer which is arranged above the semiconductor substrate 120, and a capacitive element 110 which is arranged in the wiring layer and surrounds the first photoelectric conversion part in a plan view. The capacitive element 110 includes a lower electrode 111 as an example of a first electrode, an upper electrode 112 as an example of a second electrode, and a dielectric layer 113 which is arranged between the first electrode and the second electrode. The first electrode is connected to a photodiode 410 as an example of the first photoelectric conversion part or the second photoelectric conversion part.SELECTED DRAWING: Figure 5 【課題】低ノイズで、かつ、広ダイナミックレンジの撮像装置を提供する。【解決手段】本開示の一態様に係る撮像装置は、半導体基板１２０と、半導体基板１２０内に配置された第１の光電変換部と、半導体基板１２０内に配置された第１の光電変換部とは異なる第２の光電変換部と、半導体基板１２０の上方に配置された配線層と、配線層内に配置され、平面視において、第１の光電変換部を囲む容量素子１１０と、を備える。容量素子１１０は、第１の電極の一例である下部電極１１１、第２の電極の一例である上部電極１１２、及び第１の電極と第２の電極との間に配置された誘電体層１１３を含む。第１の電極は、第１の光電変換部又は第２の光電変換部の一例であるフォトダイオード４１０に接続されている。【選択図】図５