FILM DEPOSITION METHOD

• Main Author: HIGASHI DAISUKE
• Format: Patent
• Language: English; Japanese
• Published: 26.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film deposition method by which high-resolution plasma can be generated so that an in-film hydrogen concentration of a silicon film to be formed can be made lower even with a substrate kept at a relatively low temperature.SOLUTION: A film deposition method for growing a silicon film having an amorphous structure on a substrate set in a vacuum chamber by plasma comprises the steps of: applying a radiofrequency power having a power density of 1.1 W/cmor more and 1.9 W/cmor less to an antenna set in the vacuum chamber to generate plasma of inductive coupling type in the vacuum chamber with a vacuum chamber inside pressure kept at a pressure of 5 mTorr or more and 10 mTorr or less; and introducing SiHgas into the vacuum chamber to grow the silicon film having an amorphous structure on the substrate.SELECTED DRAWING: Figure 1 【課題】 比較的低温に基板を維持した状態であっても成膜されるシリコン膜の膜中水素濃度を低くできるように、分解能力の高いプラズマを発生させることができる成膜方法を提供する。【解決手段】 真空槽内に設置された基板上にプラズマを用いてアモルファス構造を有するシリコン膜を成膜する成膜方法であって、前記真空槽内を５ｍＴｏｒｒ以上１０ｍＴｏｒｒ以下の圧力に保持し、前記真空槽内に設置されたアンテナに対し、パワー密度が１．１Ｗ／ｃｍ２以上１．９Ｗ／ｃｍ２以下の高周波電力を印加して、当該真空槽内に誘電結合型のプラズマを発生させ、前記真空槽内にＳｉＨ４ガスを導入して、前記基板上にアモルファス構造を有するシリコン膜を成膜する。【選択図】図１