HEAT TREATMENT DEVICE AND HEAT TREATMENT METHOD

• Main Authors: UEDA AKIMINE, AOYAMA TAKAYUKI, UENO TOMOHIRO, KITAZAWA TAKAHIRO
• Format: Patent
• Language: English; Japanese
• Published: 26.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a heat treatment device and a heat treatment method which can precisely measure reflectance over a broad band of wavelengths.SOLUTION: Synthesized light, in which light emitted from a first light source 310 whose intensity in a comparatively short wave length area is strong and then reduced through a first filter 311 is synthesized with light emitted from a second light source 320 whose intensity in a comparatively long wavelength area is strong and then reduced through a second filter 321, is irradiated to a surface of a semiconductor wafer. Reflectance of the surface of the semiconductor wafer is determined from intensity of the irradiated light and intensity of reflected light. Synthesizing light from the first light source 310 with light from the second light source 320, whose spectral distributions are different from each other allows synthesized light having certain degree of intensity over a broad wavelength area to be irradiated to the surface of the semiconductor wafer, so that reflectance of the semiconductor wafer over a broad band area of wavelengths can be precisely measured.SELECTED DRAWING: Figure 11 【課題】広帯域の波長にわたって反射率を正確に測定することができる熱処理装置および熱処理方法を提供する。【解決手段】比較的短い波長域における強度が強い第１光源３１０から出射されて第１フィルタ３１１によって減光された光と比較的長い波長域における強度が強い第２光源３２０から出射されて第２フィルタ３２１によって減光された光とを合成した合成光を半導体ウェハーの表面に照射する。照射した光の強度と反射光の強度とから半導体ウェハーの表面の反射率を求める。互いに分光分布が異なる第１光源３１０および第２光源３２０の光を合成することによって、広い波長域にわたってある程度の強度を有する合成光を半導体ウェハーの表面に照射することができ、その結果広帯域の波長にわたって半導体ウェハーの反射率を正確に測定することができる。【選択図】図１１