PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

• Main Authors: FUKUCHI KOSUKE, USUI TAKETO, HIROTA KOSA, NAKAMOTO SHIGERU, INOUE TOMOMI
• Format: Patent
• Language: English; Japanese
• Published: 19.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To enhance yield of processing by precisely detecting remaining thickness of a membrane to be processed during the processing.SOLUTION: A plasma processing method for processing a membrane structure formed previously on an upper surface of a wafer placed in a processing chamber inside a vacuum container, the membrane structure including a membrane to be processed and a mask layer placed thereunder, by using plasma formed in the processing chamber includes a step of calculating an etching amount of a membrane to be processed at the time during processing an arbitrary wafer, by using comparison results of data of an actual pattern and data of a detection pattern synthesizing the actual pattern of intensity having as a parameter wavelength of interference light obtained during processing of the membrane structure on an arbitrary wafer, and two intensity patterns having as a parameter the wavelength of the interference light obtained by processing in advance the membrane structure having the membrane to be processed and three or more mask layers having different thickness before processing the arbitrary wafer.SELECTED DRAWING: Figure 1 【課題】処理中に処理対象の膜の残り厚さを精密に検出して処理の歩留まりを向上させる。【解決手段】真空容器の内部の処理室内に載置されたウエハ上面に予め形成された膜構造であって処理対象の膜及びその下方に配置されたマスク層を含む膜構造を前記処理室内に形成したプラズマを用いて処理するプラズマ処理方法であって、任意の前記ウエハ上の前記膜構造の処理中に得られた干渉光の波長をパラメータとする強度の実パターンと前記任意のウエハの処理の前に予め前記処理対象の膜及び前記マスク層の３つ以上の異なる厚さの前記マスク層を有した膜構造を処理して得られた前記干渉光の波長をパラメータとする強度のパターンのうち２つを合成した検出用パターンのデータと前記実パターンのデータとを比較した結果を用いて前記任意のウエハの処理中の時刻の前記処理対象の膜のエッチング量を算出するステップとを備えた。【選択図】 図１