SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

• Main Authors: SUGAWARA YUJI, TAKEMATSU YUSUKE, HIGASHI KATSUE, AOKI HIROSHI, NUKUI HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 19.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a substrate processing device which inhibits influence when component liquids of a process liquid are mixed in a discharge nozzle.SOLUTION: A substrate processing device 100 processes a substrate W with a process liquid L. The substrate processing device 100 includes a discharge nozzle 130 and a supply part 140. The discharge nozzle 130 has a discharge port 132 and a discharge passage 134. The discharge port 132 discharges the process liquid L to the substrate W. The discharge passage 134 communicates with the discharge port 132. The supply port 140 communicates with the discharge passage 134 of the discharge nozzle 130. At least a part of the discharge passage 134 is made of quartz. The supply part 140 has a first supply passage 141 and a second supply passage 142. The first supply passage 141 flows a first component liquid L1 of the process liquid L in the discharge passage 134 of the discharge nozzle 130. The second supply passage 142 flows a second component liquid L2 of the process liquid L in the discharge passage 134 of the discharge nozzle 130.SELECTED DRAWING: Figure 1 【課題】処理液の成分液が吐出ノズルにおいて混合した際の影響を抑制した基板処理装置を提供する。【解決手段】基板処理装置１００は基板Ｗを処理液Ｌで処理する。基板処理装置１００は、吐出ノズル１３０と、供給部１４０とを備える。吐出ノズル１３０は、吐出口１３２と、吐出流路１３４とを有する。吐出口１３２は、基板Ｗに処理液Ｌを吐出する。吐出流路１３４は吐出口１３２と連絡する。供給部１４０は、吐出ノズル１３０の出流路１３４と連絡する。吐出流路１３４の少なくとも一部が石英から形成される。供給部１４０は、第１供給流路１４１と、第２供給流路１４２とを有する。第１供給流路１４１は、処理液Ｌの第１成分液Ｌ１を吐出ノズル１３０の吐出流路１３４に流す。第２供給流路１４２は、処理液Ｌの第２成分液Ｌ２を吐出ノズル１３０の吐出流路１３４に流す。【選択図】図１