SEMICONDUCTOR DEVICE

• Main Authors: NAKASHIBA YASUTAKA, IIDA TETSUYA, KUWABARA SHINICHI
• Format: Patent
• Language: English; Japanese
• Published: 12.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To downsize a semiconductor device.SOLUTION: A semiconductor device SD comprises a semiconductor chip CHa including an inductor element L1 and an inductor element L2 on a principal surface PSa side, a semiconductor chip CHb including an inductor element L3 on a principal side PSb side, and a semiconductor chip CHc including an inductor element L4 on a principal surface PSc side. The inductor element L1 and the inductor element L2 are arranged separated from each other in a first direction Y of a principal surface PSa. The principal surface Psa faces the principal surface PSb, and the inductor element L1 and the inductor element L3 overlap with each other. Furthermore, the principal surface PSa faces the principal surface PSc, and the inductor element L2 and the inductor element L4 overlap with each other. A creepage distance CD1 between the semiconductor chip CHb and the semiconductor chip CHc is greater than a clearance Dbc between the semiconductor chip CHb and the semiconductor chip CHc.SELECTED DRAWING: Figure 10 【課題】半導体装置を小型化する。【解決手段】半導体装置ＳＤは、主面ＰＳａ側にインダクタ素子Ｌ１およびインダクタ素子Ｌ２を有する半導体チップＣＨａと、主面ＰＳｂ側にインダクタ素子Ｌ３を有する半導体チップＣＨｂと、主面ＰＳｃ側にインダクタ素子Ｌ４を有する半導体チップＣＨｃと、を有する。そして、インダクタ素子Ｌ１とインダクタ素子Ｌ２とは、主面ＰＳａの第１方向Ｙにおいて互いに離間して配置されており、主面ＰＳａと主面ＰＳｂとは対向し、インダクタ素子Ｌ１とインダクタ素子Ｌ３とは互いに重なっている。さらに、主面ＰＳａと主面ＰＳｃとは対向し、インダクタ素子Ｌ２とインダクタ素子Ｌ４とは互いに重なっており、半導体チップＣＨｂと半導体チップＣＨｃとの間の沿面距離ＣＤ１は、半導体チップＣＨｂと半導体チップＣＨｃとの間の離間距離Ｄｂｃよりも大きい。【選択図】図１０