FILM-LIKE SEMICONDUCTOR ENCAPSULATION MATERIAL

• Main Authors: IWATANI RUKA, TOSAKA KENICHI, HOCCHI TOYOKAZU
• Format: Patent
• Language: English; Japanese
• Published: 12.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

To provide a film-like semiconductor encapsulation material which has high credibility and can be applied to reflow mounting.SOLUTION: There is provided a film-like semiconductor encapsulation material for reflow mounting compression heating curing, containing at least (A) a solid epoxy resin, (B) a liquid epoxy resin, (C) a solid phenol resin, (D) a curing accelerator, (E) a liquid elastomer, and (F) a film forming agent having number average molecular weight (Mn) of 5,000 or less. In the film-like semiconductor encapsulation material, a ratio of a hydroxyl equivalent of the (C) solid phenol resin to an epoxy equivalent of an epoxy component consisting of the (A) solid epoxy resin and the (B) liquid epoxy resin, ((C) hydroxyl equivalent/((A)+(B)) epoxy equivalent) is 0.8 to 1.6, content of the (C) is 25 mass% based on total mass of the (A), the (B), the (C) and the (E), content of the (D) curing accelerator is 0.01 to 0.1 mass% based on the total mass of the (A) to the (F), and content of the (F) film forming agent is 0.1 to 0.73 mass% based on the total mass of the (A) to the (F).SELECTED DRAWING: None 【課題】信頼性が高く、リフロー実装に適用できるフィルム状半導体封止材の提供。【解決手段】少なくとも（Ａ）固形エポキシ樹脂、（Ｂ）液状エポキシ樹脂、（Ｃ）固形フェノール樹脂、（Ｄ）硬化促進剤、（Ｅ）液状エラストマー、（Ｆ）数平均分子量（Ｍｎ）が５０００以下のフィルム形成剤 を含有し、前記（Ａ）固形エポキシ樹脂と前記（Ｂ）液状エポキシ樹脂からなるエポキシ成分のエポキシ当量と、前記（Ｃ）固形フェノール樹脂の水酸基当量との比（（Ｃ）水酸基当量／（（Ａ）＋（Ｂ））エポキシ当量）が０．８〜１．６であり、前記（Ｃ）の含有量が、前記（Ａ）、前記（Ｂ）前記（Ｃ）および前記（Ｅ）の合計質量に対する質量％で２５質量％以上含有し、前記（Ｄ）硬化促進剤の含有量が、前記（Ａ）〜前記（Ｆ）の合計質量に対する質量％で０．０１〜０．１質量％であり、前記（Ｆ）フィルム形成剤の含有量が、前記（Ａ）〜前記（Ｆ）の合計質量に対する質量％で０．１〜０．７３質量％である、リフロー実装加圧加熱硬化用フィルム状半導体封止材。【選択図】なし