SEMICONDUCTOR STORAGE DEVICE

• Main Author: AOYAMA KENJI
• Format: Patent
• Language: English; Japanese
• Published: 05.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor storage device capable of improving an integration degree.SOLUTION: A semiconductor storage device 1 comprises: a lamination body 20 in which a plurality of electrode films 26 is mutually and separately arranged along a Z direction, and in which a terrace T is formed in each electrode film in an end part of a X direction; a semiconductor member extended to the Z direction and penetrating a cell part 21 excluding the end part in the lamination body; a charge storage member provided between each electrode film and the semiconductor member; a first member 41 provided in the cell part, expanded along the Z and X directions, and in which a part contacted to at least electrode films has an insulation property; and a plurality of second members 42 provided in the end part, and in which the part contacted to at least electrode films has the insulation property. Each electrode film includes two part mutually separated in a Y direction. The two pats are separated in the Y direction by the first member and the plurality of second members. The insulation body between the plurality of electrode films is continuously formed on both sides of the second member in the Y direction.SELECTED DRAWING: Figure 2 【課題】集積度を向上可能な半導体記憶装置を提供する。【解決手段】半導体記憶装置１は、複数の電極膜２６がＺ方向に沿って相互に離隔して配列され、Ｘ方向の端部に前記電極膜毎にテラスＴが形成された積層体２０と、Ｚ方向に延び、前記積層体における前記端部を除くセル部２１を貫く半導体部材と、前記電極膜と前記半導体部材との間に設けられた電荷蓄積部材と、前記セル部内に設けられ、前記Ｚ方向及び前記Ｘ方向に沿って拡がり、少なくとも前記電極膜に接する部分が絶縁性である第１部材４１と、前記端部内に設けられ、少なくとも前記電極膜に接する部分が絶縁性である複数の第２部材４２と、を備える。前記電極膜は、Ｙ方向に相互に離隔された２つの部分を有する。前記２つの部分は前記第１部材及び前記複数の第２部材によりＹ方向に離隔されている。前記複数の電極膜間の絶縁体は、Ｙ方向における前記第２部材の両側にわたって連続的に形成されている。【選択図】図２