FILM FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE

• Main Authors: SHIRAI MASAKI, YAMAMOTO TAKUJI, TAKAZAWA SATORU
• Format: Patent
• Language: English; Japanese
• Published: 05.09.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DEVICES USING STIMULATED EMISSION; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a technique for reducing damage to a semiconductor layer serving as a base when a plurality of semiconductor layers are stacked in a semiconductor device using a semiconductor material containing gallium nitride as a main component.SOLUTION: A film forming method includes a step of forming a second semiconductor layer made of a semiconductor containing a gallium nitride as a base on the surface of a first semiconductor layer made of a semiconductor containing a gallium nitride as a base provided on a substrate. The film forming method includes a sputtering film forming step of forming the second semiconductor layer containing gallium nitride as a base by a sputtering method, and the sputtering film forming step is performed at a substrate temperature lower than the decomposition temperature of the first semiconductor layer containing gallium nitride as the base.SELECTED DRAWING: Figure 1 【課題】窒化ガリウムを主成分とする半導体材料を用いた半導体デバイスにおいて、複数の半導体層を積層形成する際に下地となる半導体層に対するダメージを減少させる技術を提供する。【解決手段】基板上に設けられた窒化ガリウムを主成分とする半導体からなる第１の半導体層の表面に、窒化ガリウムを主成分とする半導体からなる第２の半導体層を形成する工程を有する成膜方法である。窒化ガリウムを主成分とする第２の半導体層をスパッタリング法によって形成するスパッタ成膜工程を有し、スパッタ成膜工程を、窒化ガリウムを主成分とする第１の半導体層の分解温度より低い基板温度で行う。【選択図】図１