MANUFACTURING METHOD OF GALLIUM NITRIDE THIN FILM AND LIGHT-EMITTING DEVICE

• Main Authors: SHIRAI MASAKI, YAMAMOTO TAKUJI, TAKAZAWA SATORU
• Format: Patent
• Language: English; Japanese
• Published: 05.09.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To improve a growth rate and a crystallinity of a gallium nitride thin film.SOLUTION: A major layer thin film 6 composed of a gallium nitride thin film is grown on a surface of an initial layer thin film 5 composed of the gallium nitride thin film which is grown at a slow growth rate by sputtering a target 33 while a radical is ejected from a radical gun part 40 toward a substrate 22 and have a high orientation. An orientation of the initial layer thin film 5 located on a bottom surface affects an orientation of the major layer thin film 6, and the orientation of the major layer thin film 6 is improved.SELECTED DRAWING: Figure 1 【課題】窒化ガリウム薄膜の成長率と結晶性を向上させる。【解決手段】ラジカルガン部４０から基板２２に向けてラジカルを放出させながらターゲット３３をスパッタリングし、低成長率で成長し、配向性が高い窒化ガリウム薄膜から成る初期層薄膜５の表面に、窒化ガリウム薄膜から成る主層薄膜６を高成長率でエピタキシャル成長させる。底面に位置する初期層薄膜５の配向性が主層薄膜６の配向性に影響を与え、主層薄膜６の配向性が向上する。【選択図】 図１