FILM FORMING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Authors: OKADA MITSUHIRO, TAKAGI SATOSHI, KANEMURA RUI, HAYASHI HIROYUKI
• Format: Patent
• Language: English; Japanese
• Published: 29.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a film forming method capable of forming a film having good surface roughness.SOLUTION: The film forming method includes: an organic matter removal step of supplying a hydrogen-containing gas and an oxygen-containing gas to a base (silicon substrate 101) to remove organic matter 103 adhering to an oxide film generated on a surface of the base; an oxide film removal step of supplying a halogen-containing gas and a basic gas to the base after the organic matter removal step to remove an oxide film 102 formed on the surface of the base; and a deposition step of depositing a predetermined film 104 on the surface of the base after the oxide film removal step.SELECTED DRAWING: Figure 3 【課題】良好な表面ラフネスを有する膜を形成することが可能な膜形成方法を提供する。【解決手段】膜形成方法は、下地（シリコン基板１０１）に水素含有ガス及び酸素含有ガスを供給して下地の表面に生じた酸化膜に付着した有機物１０３を除去する有機物除去工程と、有機物除去工程の後、下地にハロゲン含有ガス及び塩基性ガスを供給して下地の表面に形成された酸化膜１０２を除去する酸化膜除去工程と、酸化膜除去工程の後、下地の表面に所定の膜１０４を成膜する成膜工程と、を有する。【選択図】図３