SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD OF THE SAME
To provide a semiconductor light-receiving element composed of a compound semiconductor light-receiving layer having a low dark current and excellent light-receiving characteristics and an Si avalanche multiplication layer.SOLUTION: The semiconductor light-receiving element includes: an Si avalanche...
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Format | Patent |
Language | English Japanese |
Published |
29.08.2019
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Abstract | To provide a semiconductor light-receiving element composed of a compound semiconductor light-receiving layer having a low dark current and excellent light-receiving characteristics and an Si avalanche multiplication layer.SOLUTION: The semiconductor light-receiving element includes: an Si avalanche multiplication unit provided on an Si substrate 1; an Si-pn junction surrounding the Si avalanche multiplication unit and having a junction end at a different height from the Si avalanche multiplication unit; a passivation film 8 provided at an end of the Si-pn junction; a compound semiconductor light-receiving layer 6 provided selectively in an Si-pn junction region on the Si avalanche multiplication unit.SELECTED DRAWING: Figure 1
【課題】暗電流が低く受光特性に優れた化合物半導体受光層とSiアバランシェ増倍層からなる半導体受光素子の提供。【解決手段】Si基板1に設けられたSiアバランシェ増倍部と、Siアバランシェ増倍部を取り囲み且つSiアバランシェ増倍部と異なる高さに接合端部を有するSi−pn接合と、Si−pn接合端部に設けられたパッシベーション膜8と、Siアバランシェ増倍部上のSi−pn接合領域内に選択的に設けられた化合物半導体受光層6を備える。【選択図】図1 |
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AbstractList | To provide a semiconductor light-receiving element composed of a compound semiconductor light-receiving layer having a low dark current and excellent light-receiving characteristics and an Si avalanche multiplication layer.SOLUTION: The semiconductor light-receiving element includes: an Si avalanche multiplication unit provided on an Si substrate 1; an Si-pn junction surrounding the Si avalanche multiplication unit and having a junction end at a different height from the Si avalanche multiplication unit; a passivation film 8 provided at an end of the Si-pn junction; a compound semiconductor light-receiving layer 6 provided selectively in an Si-pn junction region on the Si avalanche multiplication unit.SELECTED DRAWING: Figure 1
【課題】暗電流が低く受光特性に優れた化合物半導体受光層とSiアバランシェ増倍層からなる半導体受光素子の提供。【解決手段】Si基板1に設けられたSiアバランシェ増倍部と、Siアバランシェ増倍部を取り囲み且つSiアバランシェ増倍部と異なる高さに接合端部を有するSi−pn接合と、Si−pn接合端部に設けられたパッシベーション膜8と、Siアバランシェ増倍部上のSi−pn接合領域内に選択的に設けられた化合物半導体受光層6を備える。【選択図】図1 |
Author | FURUYAMA HIDETO |
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DocumentTitleAlternate | 半導体受光素子およびその製造方法 |
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Snippet | To provide a semiconductor light-receiving element composed of a compound semiconductor light-receiving layer having a low dark current and excellent... |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD OF THE SAME |
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