SEMICONDUCTOR LIGHT RECEIVING ELEMENT AND MANUFACTURING METHOD OF THE SAME

• Main Author: FURUYAMA HIDETO
• Format: Patent
• Language: English; Japanese
• Published: 29.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a semiconductor light-receiving element composed of a compound semiconductor light-receiving layer having a low dark current and excellent light-receiving characteristics and an Si avalanche multiplication layer.SOLUTION: The semiconductor light-receiving element includes: an Si avalanche multiplication unit provided on an Si substrate 1; an Si-pn junction surrounding the Si avalanche multiplication unit and having a junction end at a different height from the Si avalanche multiplication unit; a passivation film 8 provided at an end of the Si-pn junction; a compound semiconductor light-receiving layer 6 provided selectively in an Si-pn junction region on the Si avalanche multiplication unit.SELECTED DRAWING: Figure 1 【課題】暗電流が低く受光特性に優れた化合物半導体受光層とＳｉアバランシェ増倍層からなる半導体受光素子の提供。【解決手段】Ｓｉ基板１に設けられたＳｉアバランシェ増倍部と、Ｓｉアバランシェ増倍部を取り囲み且つＳｉアバランシェ増倍部と異なる高さに接合端部を有するＳｉ−ｐｎ接合と、Ｓｉ−ｐｎ接合端部に設けられたパッシベーション膜８と、Ｓｉアバランシェ増倍部上のＳｉ−ｐｎ接合領域内に選択的に設けられた化合物半導体受光層６を備える。【選択図】図１