MANUFACTURING METHOD OF ALUMINUM NITRIDE WAFER

• Main Authors: IWASAKI YOSUKE, NAKAMURA KEIICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 29.08.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

To provide an aluminum nitride single crystal cuttable more easily than hitherto.SOLUTION: An aluminum nitride single crystal 1 has a matrix region M constituting a matrix of the aluminum nitride single crystal 1, and at least one domain region D included in the matrix region. An aluminum nitride wafer is obtained by applying a wafer processing treatment to the aluminum nitride single crystal 1.SELECTED DRAWING: Figure 1 【課題】従来よりも切断が容易な窒化アルミニウム単結晶を提供する。【解決手段】窒化アルミニウム単結晶１であって、該窒化アルミニウム単結晶１の母体を構成するマトリックス領域Ｍと、該マトリックス領域内に含まれる少なくとも１つのドメイン領域Ｄとを有する、窒化アルミニウム単結晶１に対してウェーハ加工処理を施して、窒化アルミニウムウェーハを得ることを特徴とする。【選択図】図１