SOLID-STATE IMAGING SENSOR AND IMAGING SYSTEM

• Main Authors: INATANI NAOKI, TAKAHASHI HIDEKAZU, ITABASHI MASAJI, ONO TOSHIAKI, MAEHASHI YU
• Format: Patent
• Language: English; Japanese
• Published: 15.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To solve the problem in which it is difficult to uniformly form a layer, provided over a photoelectric conversion film, of a pixel for phase different detection and a pixel for imaging.SOLUTION: A plurality of pixels arrayed two-dimensionally each comprises a photoelectric conversion part including a pixel electrode, a photoelectric conversion layer provided on the pixel electrode, and a counter electrode provided to sandwich the photoelectric conversion layer with the pixel electrode, and a microlens arranged over the photoelectric conversion part. The plurality of pixels includes a first pixel and a plurality of second pixels, and the plurality of second pixels are such that at least one of the pixel electrode and the counter electrode is smaller than the first pixel and a structure between the counter electrode and the microlens is the same in the first pixel and the plurality of second pixels.SELECTED DRAWING: Figure 3 【課題】 位相差検出用画素と撮像用画素とで、光電変換膜の上に設けられる層を均一に形成することが困難であった。【解決手段】 二次元状に配列された複数の画素のそれぞれが、画素電極と、画素電極の上に設けられた光電変換層と、光電変換層を画素電極とで挟むように設けられた対向電極とを含む光電変換部および光電変換部上に配置されたマイクロレンズを備え、前数の画素は第１の画素と複数の第２の画素を含み、複数の第２の画素は、第１の画素よりも画素電極および対向電極の少なくとも一方が小さく、さらに、対向電極とマイクロレンズとの間の構造が、第１の画素と複数の第２の画素で同じである。【選択図】 図３