REFLECTIVE ANODE ELECTRODE FOR ORGANIC EL DISPLAY
To provide a reflective anode electrode for organic EL display comprising a novel Al alloy reflective film capable of securing low contact resistance and high reflectivity even in a case where the Al alloy reflective film is brought into direct contact with an oxide conductive film such as ITO or IZ...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
15.08.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To provide a reflective anode electrode for organic EL display comprising a novel Al alloy reflective film capable of securing low contact resistance and high reflectivity even in a case where the Al alloy reflective film is brought into direct contact with an oxide conductive film such as ITO or IZO.SOLUTION: The present invention relates to a reflective anode electrode for organic EL display consisting of a laminated structure comprising an Al-Ge-based alloy film and an oxide conductive film in contact with the Al-Ge-based alloy film and interposing a layer containing aluminium oxide as a main component on a contact interface thereof. The Al-Ge-based alloy film contains Ge in 0.1-2.5 atom%, and a Ge concentrated layer and a Ge containing deposit are formed on the contact interface of the Al-Ge-based alloy film and the oxide conductive film. In the Al-Ge-based alloy film, an average Ge concentration within 50 nm from a surface closer to the oxide conductive film is twice or more as much as an average Ge concentration in the Al-Ge-based alloy film, and an average diameter of the Ge containing deposit is 0.1 μm or more.SELECTED DRAWING: Figure 1
【課題】Al合金反射膜をITOやIZOなどの酸化物導電膜と直接接触させても、低い接触抵抗と高い反射率を確保することができる、新規なAl合金反射膜を備えた有機ELディスプレイ用の反射アノード電極を提供する。【解決手段】Al−Ge系合金膜と、Al−Ge系合金膜に接触する酸化物導電膜とを備える積層構造からなり、これらの接触界面に酸化アルミニウムを主成分とする層が介在する有機ELディスプレイ用の反射アノード電極であって、Al−Ge系合金膜は、Geを0.1〜2.5原子%含有するとともに、Al−Ge系合金膜と酸化物導電膜との接触界面には、Ge濃化層およびGe含有析出物が形成されており、Al−Ge系合金膜における、酸化物導電膜側の表面から50nm以内の平均Ge濃度が、Al−Ge系合金膜中の平均Ge濃度の2倍以上であり、かつ、Ge含有析出物の平均直径が0.1μm以上である。【選択図】図1 |
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Bibliography: | Application Number: JP20180018432 |