SUBSTRATE PROCESSOR AND METHOD FOR PROCESSING SUBSTRATE

• Main Authors: HAYASHI MASAYUKI, TAKEAKI REI, OTA TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 01.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a method for processing a substrate that can suppress reduction in the characteristics of a substrate while reducing the thickness of the film to be removed from the substrate.SOLUTION: The method for processing substrate is for processing a substrate (W). The method for processing substrate includes the steps of: processing the substrate (W) with a solution of phosphoric acid (Lp); processing the substrate (W) with a rinse liquid (Lr); and processing the substrate (W) with a medicinal solution (Lc) containing ammonia. The step of processing the substrate (W) with the medical solution (Lc) removes the film with certain thicknesses in the depth direction of a phosphorus diffusion region (PD), which is formed in the substrate (W) when processing the substrate (W) with the phosphoric acid liquid (Lp) after processing the substrate (W) with the rinse liquid (Lr), from the phosphorus diffusion region (PD).SELECTED DRAWING: Figure 1 【課題】基板から除去する膜の厚さを減らすとともに基板の特性の低下を抑制可能な基板処理方法を提供する。【解決手段】基板処理方法は基板（Ｗ）を処理する。基板処理方法は、基板（Ｗ）を燐酸液（Ｌｐ）で処理する工程と、基板（Ｗ）をリンス液（Ｌｒ）で処理する工程と、アンモニアを含有する薬液（Ｌｃ）で基板（Ｗ）を処理する工程とを包含する。薬液（Ｌｃ）で基板（Ｗ）を処理する工程は、基板（Ｗ）をリンス液（Ｌｒ）で処理した後に、基板（Ｗ）を燐酸液（Ｌｐ）で処理した際に基板（Ｗ）に形成された燐拡散領域（ＰＤ）から燐拡散領域（ＰＤ）の深さ方向における一部の厚さの膜を除去する。【選択図】図１