PHOTODETECTOR, MANUFACTURING METHOD THEREOF, AND IMAGING APPARATUS

• Main Author: YAMASHITA HIROYASU
• Format: Patent
• Language: English; Japanese
• Published: 25.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; NANOTECHNOLOGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

To improve the S/N in a photodetector using quantum dots.SOLUTION: A photodetector includes a quantum dot group including a first quantum dot 14X having a reference size and a second quantum dot having a size other than the reference size, a first resonant tunnel structure 15 provided on one side of the quantum dot group and including a barrier layer 7, a well layer 8 and a barrier layer 9, and a second resonant tunnel structure 16 provided on the other side of the quantum dot group and including a barrier layer 11, a well layer 12, and a barrier layer 13, and the first resonance level in the first resonance tunnel structure and the ground level of the first quantum dot are in a relationship in which a tunnel phenomenon occurs, and the second resonance level in the second resonance tunnel structure and the excitation level of the first quantum dot are in a relationship in which a tunnel phenomenon occurs.SELECTED DRAWING: Figure 2 【課題】量子ドットを用いる光検出器において、Ｓ／Ｎを向上させる。【解決手段】光検出器を、基準サイズを有する第１量子ドット１４Ｘ及び基準サイズ以外のサイズを有する第２量子ドットを含む量子ドット群と、量子ドット群の一方の側に設けられ、障壁層７、井戸層８、障壁層９からなる第１共鳴トンネル構造１５と、量子ドット群の他方の側に設けられ、障壁層１１、井戸層１２、障壁層１３からなる第２共鳴トンネル構造１６とを備え、第１共鳴トンネル構造における第１共鳴準位と第１量子ドットの基底準位が、トンネル現象が起こる関係になっており、かつ、第２共鳴トンネル構造における第２共鳴準位と第１量子ドットの励起準位が、トンネル現象が起こる関係になっているものとする。【選択図】図２