GAS DISTRIBUTION SHOWER HEAD FOR SEMICONDUCTOR TREATMENT

• Main Authors: MEHMET TUGRUL SAMIR, ANH N NGUYEN, DMITRY LUBOMIRSKY
• Format: Patent
• Language: English; Japanese
• Published: 25.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a treatment chamber including a gas distribution assembly bringing about improved uniform distribution of process gas.SOLUTION: A gas distribution assembly 134 in a semiconductor treatment chamber 104 includes a gas distribution plate 136, a blocker plate 138 and a dual zone shower head 130. The gas distribution assembly brings about a zone property of flow from an independent center to the end, supply of independent two precursors, mixing of two precursors through a mixing manifold 120, and repetitive mass flow distribution on the gas distribution plate.SELECTED DRAWING: Figure 1 【課題】処理ガスの改善された均一分配をもたらすガス分配アセンブリを備えた処理チャンバの提供。【解決手段】半導体処理チャンバ１０４内のガス分配アセンブリ１３４は、ガス分配プレート１３６、ブロッカプレート１３８、及びデュアルゾーンシャワーヘッド１３０を含む。ガス分配アセンブリは、独立した中心から端部への流れのゾーン性、独立した２前駆体供給、ミキシングマニホールド１２０を介した２前駆体混合、及びガス分配プレートでの反復的な質量流分配をもたらす。【選択図】図１