MULTILAYER SUBSTRATE, COMPONENT MOUNTING SUBSTRATE, HEAT DISSIPATION STRUCTURE AND ELECTRIC APPARATUS

To improve versatility and to improve manufacture efficiency while maintaining high heat conductivity.SOLUTION: A multilayer substrate comprises: double-layer substrates 21a-21c in each of which conductor layers 31 are formed on both surfaces of an insulation layer 32; and insulation layers 22a and...

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Bibliographic Details
Main Author SUGAYA HIROSHI
Format Patent
LanguageEnglish
Japanese
Published 22.07.2019
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Summary:To improve versatility and to improve manufacture efficiency while maintaining high heat conductivity.SOLUTION: A multilayer substrate comprises: double-layer substrates 21a-21c in each of which conductor layers 31 are formed on both surfaces of an insulation layer 32; and insulation layers 22a and 22b which are held between the double-layer substrates 21a-21c, and is configured to conduct external heat conducted from the outside to the conductor layer 31 closer to a top face 11a or internal heat generated in the conductor layer 31 closer to the top face 11a to the conductor layer 31 closer to a bottom face 11b. The insulation layer 32 and the insulation layers 22a and 22b are formed from a high-heat-conductivity material and in opposite regions Ba-Bc of the double-layer substrates 21a-21c facing a conduction region A to which the external heat is conducted or a region in which the internal heat is generated in the conductor layer 31 closer to the top face 11a, a via 33 is provided for connecting a pair of conductor layers 31 formed on both the surfaces of the double-layer substrates 21a-21c with each other.SELECTED DRAWING: Figure 3 【課題】高い熱伝導性を維持しつつ、汎用性を向上させると共に製造効率を向上させる。【解決手段】絶縁層32の両面に導体層31がそれぞれ形成された二層基板21a〜21cと、二層基板21a〜21cの間に挟まれた絶縁層22a,22bとを備えて、上面11a側の導体層31に外部から伝導した外部の熱または上面11a側の導体層31において発生した内部の熱を下面11b側の導体層31に伝導可能に構成され、絶縁層32および絶縁層22a,22bは、高熱伝導性材料でそれぞれ形成され、上面11a側の導体層31における外部の熱が伝導する伝導領域Aまたは内部の熱を発生する領域に対向する二層基板21a〜21cの対向領域Ba〜Bcには、二層基板21a〜21cの両面にそれぞれ形成された一対の導体層31同士を接続するビア33が設けられている。【選択図】図3
Bibliography:Application Number: JP20180000971