VARIABLE RESISTANCE ELEMENT, METHOD OF MANUFACTURING VARIABLE RESISTANCE ELEMENT, AND SEMICONDUCTOR DEVICE

• Main Author: SUGII TOSHIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 22.07.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To reduce a size of a nonvolatile variable resistance element having an all solid secondary battery structure.SOLUTION: The variable resistance element has a laminated structure of an all solid secondary battery in which a lower electrode, a positive electrode layer, a solid electrolyte layer, a negative electrode layer, and an upper electrode are sequentially laminated above a substrate. Two measurement electrodes in contact with side surfaces of a positive electrode layer or two layers of the positive electrode layer and a solid electrolyte layer are formed in a self-aligned manner on different side surfaces of the laminated structure. In an arrangement of the measurement electrodes, an alignment margin is not required, so that a size of the nonvolatile variable resistance element is reduced.SELECTED DRAWING: Figure 1 【課題】全固体二次電池構造を有する不揮発性の抵抗変化素子の大きさを低減する。【解決手段】基板上方に下部電極、正極層、固体電解質層、負極層、及び上部電極が順次積層された全固体二次電池の構造に係る積層構造を有し、積層構造の異なる側面に、正極層、若しくは正極層及び固体電解質層の２層の側面と接触する２つの測定電極をセルフアラインで形成するようにして、測定電極の配置において位置合わせ余裕分を不要にし、不揮発性の抵抗変化素子の大きさを低減する。【選択図】図１