THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY INCLUDING THE SAME

To provide a thin-film transistor that can alleviate the occurrence of electric field concentration in an oxide semiconductor layer during the drive of the thin-film transistor, so as to prevent partial degradation of the oxide semiconductor layer.SOLUTION: A thin-film transistor 100 is a thin-film...

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Bibliographic Details
Main Author JANG JAEMAN
Format Patent
LanguageEnglish
Japanese
Published 04.07.2019
Subjects
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FREQUENCY-CHANGING
LABELS OR NAME-PLATES
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:To provide a thin-film transistor that can alleviate the occurrence of electric field concentration in an oxide semiconductor layer during the drive of the thin-film transistor, so as to prevent partial degradation of the oxide semiconductor layer.SOLUTION: A thin-film transistor 100 is a thin-film transistor including an oxide semiconductor layer 130 on a substrate 110, and the oxide semiconductor layer includes a channel part 131, a first channel connection part 132 connected to a first terminal part 131A of the channel part, and a second channel connection part 133 connected to a second terminal part 131B of the channel part. The thickness of the second channel connection part is different from the thickness of the first channel connection part. The first terminal part of the channel part has the same thickness as that of the first channel connection part, and the second terminal part of the channel part has the same thickness as that of the second channel connection part.SELECTED DRAWING: Figure 1 【課題】薄膜トランジスタの駆動時の酸化物半導体層で電界集中が発生することを緩和して、酸化物半導体層の部分的な劣化を防止することができる薄膜トランジスタを提供する。【解決手段】薄膜トランジスタ１００は、基板１１０上の酸化物半導体層１３０を含む薄膜トランジスタであって、酸化物半導体層は、チャネル部１３１、チャネル部の第１末端部１３１Ａと接続した第１チャネル接続部１３２およびチャネル部の第２末端部１３１Ｂと接続した第２チャネル接続部１３３を含む。第２チャネル接続部の厚さは、第１チャネル接続部の厚さと異なる。チャネル部の第１末端部は、第１チャネル接続部と同じ厚さを有し、チャネル部の第２末端部は、第２チャネル接続部と同じ厚さを有する。【選択図】図１
Bibliography:Application Number: JP20180227777