JOINED SUBSTRATE AND PRODUCTION METHOD OF JOINED SUBSTRATE

• Main Authors: EBIGASE TAKASHI, TANI MAKOTO, AWAKURA YASUTAKA, KAKU KEN
• Format: Patent
• Language: English; Japanese
• Published: 27.06.2019
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CEMENTS; CERAMICS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LIME, MAGNESIA; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRINTED CIRCUITS; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SOLDERING OR UNSOLDERING; TRANSPORTING; TREATMENT OF NATURAL STONE; WELDING; WORKING BY LASER BEAM

To provide a joined substrate mainly for a power semiconductor package, having improved reliability toward thermal shock cycle than conventional ones.SOLUTION: The joined substrate 10B contains a nitride ceramic substrate 1 having on one or both principal planes joined with a copper plate 3, wherein a joint layer 2 containing TiN is provided between the nitride ceramic substrate 1 and the copper plate 3 and is neighboring at least with the copper plate, and an Ag distribution area 3d where Ag atoms are distributed in the copper plate exists. Preferably, Ag rich phases 5 discretely exist at an interface I2 of the joint layer 2 and the copper plate 3.SELECTED DRAWING: Figure 3 【課題】従来よりも冷熱サイクルに対する信頼性を高めた、主としてパワー半導体実装用の接合基板の提供。【解決手段】窒化物セラミックス基板１の一方もしくは両方の主面に銅板３が接合されてなる接合基板１０Ｂにおいて、ＴｉＮを含む接合層２が窒化物セラミックス基板１と銅板３との間に介在するとともに少なくとも前記銅板と隣接し、銅板内にＡｇ原子が分布してなるＡｇ分布領域３ｄが存在するようにする。好ましくは、接合層２と銅板３との界面Ｉ２にＡｇリッチ相５が離散的に存在するようにする。【選択図】図３