COMPONENT FOR SEMICONDUCTOR MANUFACTURING DEVICE AND SEMICONDUCTOR MANUFACTURING DEVICE

To improve the controllability of at least one of the etching rate and the tilting.SOLUTION: A focus ring 30 is divided into two ring-shaped members 30a and 30b formed of silicon. A member 30a has a convex portion 30a1 protruding on the upper surface on the inner peripheral side of the focus ring 30...

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Bibliographic Details
Main Authors SUGAWA NAOKI, NAGASEKI KAZUYA, SATO NAOYUKI
Format Patent
LanguageEnglish
Japanese
Published 24.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To improve the controllability of at least one of the etching rate and the tilting.SOLUTION: A focus ring 30 is divided into two ring-shaped members 30a and 30b formed of silicon. A member 30a has a convex portion 30a1 protruding on the upper surface on the inner peripheral side of the focus ring 30. The focus ring 30 is disposed on an electrostatic chuck 25 such that the convex portion 30a1 approaches the peripheral portion of a wafer W. The outer peripheral side of the convex portion 30a1 of the member 30a is thinner than the convex portion 30a1 and has a flat shape. A part of the focus ring 30 is formed of a ring-shaped insulating member 30c.SELECTED DRAWING: Figure 3 【課題】エッチングレート又はチルティングの少なくともいずれかの制御性を向上させる。【解決手段】フォーカスリング３０は、シリコンで形成された２つのリング状の部材３０ａ、３０ｂに分割されている。部材３０ａは、フォーカスリング３０の内周側にて上面にて突出する凸部３０ａ１を有する。フォーカスリング３０は、凸部３０ａ１がウェハＷの周縁部に近接するように静電チャック２５上に配置される。部材３０ａの凸部３０ａ１の外周側は、凸部３０ａ１よりも薄く、フラットな形状を有する。フォーカスリング３０の一部は、リング状の絶縁部材３０ｃにより形成されている。【選択図】図３
Bibliography:Application Number: JP20170229015