PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR MANUFACTURING THE SAME, AND EQUIPMENT

• Main Authors: KANEDA TSUBASA, SHOYAMA TOSHIHIRO
• Format: Patent
• Language: English; Japanese
• Published: 24.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC COMMUNICATION TECHNIQUE; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; PICTORIAL COMMUNICATION, e.g. TELEVISION; SEMICONDUCTOR DEVICES

To provide a technique advantageous for suppressing generation of dark current or a white scratch.SOLUTION: A photoelectric conversion device comprises a photoelectric conversion unit arranged in a semiconductor substrate made of silicon, and a transistor arranged on a surface of the semiconductor substrate. The photoelectric conversion unit includes a first region of a first conductivity type for accumulating electric charge, and a second region of a second conductivity type different from the first conductivity type. The first region is arranged between the surface and the second region. The semiconductor substrate includes a third region functioning as a source and/or a drain of the transistor. The semiconductor substrate also includes an impurity region containing a Group 14 element other than silicon at a position below and separated from the third region. Depth from the surface at a peak position of concentration distribution of the Group 14 element in the impurity region is shallower than a peak position of concentration distribution of a majority carrier in the second region.SELECTED DRAWING: Figure 3 【課題】暗電流あるいは白傷の発生を抑えるために有利な技術を提供する。【解決手段】光電変換装置は、シリコンで構成された半導体基板の中に配置された光電変換部と、前記半導体基板の表面に配置されたトランジスタとを備える。前記光電変換部は、電荷を蓄積する第１導電型の第１領域と、前記第１導電型とは異なる第２導電型の第２領域とを含み、前記第１領域は、前記表面と前記第２領域との間に配置され、前記半導体基板は、前記トランジスタのソースおよび／またはドレインとして機能する第３領域を含み、前記半導体基板は、前記第３領域の下方かつ前記第３領域から離隔した位置に、シリコン以外の第１４族元素を含有する不純物領域を含み、前記不純物領域における前記第１４族元素の濃度分布のピーク位置は、前記表面からの深さが、前記第２領域における多数キャリアの濃度分布のピーク位置よりも浅い。【選択図】図３