JOINT MATERIAL, SEMICONDUCTOR DEVICE PRODUCTION METHOD USING JOINT MATERIAL, AND SEMICONDUCTOR DEVICE

• Main Authors: FURUSAWA AKIO, KITAURA HIDETOSHI, HINE KIYOHIRO
• Format: Patent
• Language: English; Japanese
• Published: 24.06.2019
• Subjects: ALLOYS; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FERROUS OR NON-FERROUS ALLOYS; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; SOLDERING OR UNSOLDERING; TRANSPORTING; TREATMENT OF ALLOYS OR NON-FERROUS METALS; WELDING; WORKING BY LASER BEAM

To provide a joint material having high heat radiation properties and high reliability, comprising a solder alloy mainly made of tin.SOLUTION: A joint material includes at least one element of 0.1 wt% to 30 wt%, the element being capable of forming a compound with tin and carbon, with the balance being tin as the main component. The at least one element is an element more susceptible to oxidation than tin, having a melting point of the compound with tin of 1000°C or higher, and being at least one selected from the group consisting of titanium, zirconium, and vanadium.SELECTED DRAWING: Figure 2 【課題】高い放熱性と高い信頼性とを有する、スズを主成分とするはんだ合金からなる接合材の提供。【解決手段】接合材は、スズおよび炭素と化合物を形成し得る少なくとも１種の元素を０．１ｗｔ％以上３０ｗｔ％以下含み、残部にスズを主成分として含む。少なくとも１種の元素は、スズよりも酸化しやすい元素で、スズとの化合物の融点が１０００℃以上であり、チタン、ジルコニウム、バナジウムの群から選択される少なくとも１種である接合材。【選択図】図２