METHOD OF SELECTIVE FILM ADHESION FOR FORMING COMPLETE SELF-ALIGNED VIA

• Main Author: KANDABARA N TAPILY
• Format: Patent
• Language: English; Japanese
• Published: 20.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a method of selective film deposition for forming a complete self-aligned via.SOLUTION: The method is executed in a batch processing system capable of processing multiple substrates simultaneously. The batch processing system includes a processing chamber having multiple processing spaces defined around a revolving shaft in the processing chamber. A substrate 1 includes a first surface 101, and a second surface 103, and the method includes a step of forming a ridge feature of an initial SiOfilm 106 selectively on the first surface for the second surface.SELECTED DRAWING: Figure 1D 【課題】完全自己整合性ビアを形成するための選択的膜付着のための方法を提供する。【解決手段】方法は、複数の基板を同時に処理することが可能なバッチ処理システムにおいて実行する。バッチ処理システムは、処理チャンバ内の回転軸の周りに画定された複数の処理空間を含む処理チャンバを含む。基板１は、第１の表面１０１と、第２の表面１０３と、を含み、第２の表面に対して第１の表面上に初期ＳｉＯ２膜１０６の隆起フィーチャを選択的に形成するステップを含む。【選択図】図１Ｄ