METHOD OF SELECTIVE DEPOSITION TO FORM FULLY SELF-ALIGNED VIA

• Main Author: KANDABARA N TAPILY
• Format: Patent
• Language: English; Japanese
• Published: 20.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

To provide a method for selective membrane deposition.SOLUTION: A method includes a step of providing a substrate 1 including a metal layer 104 having a dielectric materials 100 and 101 and a metal oxide layer 107 thereon, a step of coating the substrate with a metal-containing catalyst layer 105, a step of treating the substrate with an alcohol solution that removes the metal oxide layer from the metal layer with the metal-containing catalyst layer on the metal oxide layer, and a step of exposing the substrate to a process gas including a silanol gas for selectively depositing a SiOfilm on the metal-containing catalyst layer on the dielectric material over a period of time.SELECTED DRAWING: Figure 1B 【課題】選択的膜付着のための方法を提供する。【解決手段】方法は、誘電体材料１００、１０１及びその上に酸化金属層１０７を有する金属層１０４を含む基板１を提供するステップと、基板を金属含有触媒層１０５で被覆するステップと、酸化金属層上の金属含有触媒層と共に金属層から酸化金属層を除去するアルコール溶液で基板を処理するステップと、誘電体材料上の金属含有触媒層上にＳｉＯ２膜を選択的に付着させるシラノールガスを含むプロセスガスに基板をある期間にわたって暴露するステップと、を含む。【選択図】図１Ｂ