SOLID STATE IMAGE PICKUP DEVICE

To provide a solid state image pickup device capable of suppressing the occurrence of white scratch caused by static electricity.SOLUTION: According to one embodiment, a solid state image pickup device is provided. The solid state image pickup device have a semiconductor layer, a micro-lens, a condu...

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Bibliographic Details
Main Authors YAMADA SHUTO, MATSUDA TAKETO, IKARIYAMA RIKYU, SAWANOBORI AKIHITO
Format Patent
LanguageEnglish
Japanese
Published 13.06.2019
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Summary:To provide a solid state image pickup device capable of suppressing the occurrence of white scratch caused by static electricity.SOLUTION: According to one embodiment, a solid state image pickup device is provided. The solid state image pickup device have a semiconductor layer, a micro-lens, a conductive anti-reflection film and an anti-low refractive index film. A plurality of photoelectric conversion elements are provided on the semiconductor layer. The micro-lens is provided on each light-receiving surface side of a plurality of photoelectric conversion elements. The conductive anti-reflection film is provided on a surface of the micro-lens, and its refractive index is higher than that of the micro-lens. The anti-low refractive index film is provided on the surface of the conductive anti-reflection film, and its refractive index is higher than that of the air and lower than that of the micro-lens.SELECTED DRAWING: Figure 4 【課題】静電気に起因する白傷の発生を抑制することができる固体撮像装置を提供すること。【解決手段】一つの実施形態によれば、固体撮像装置が提供される。固体撮像装置は、半導体層とマイクロレンズと導電性反射防止膜と低屈折率防止膜とを備える。半導体層には、複数の光電変換素子が設けられる。マイクロレンズは、複数の光電変換素子の各受光面側に設けられる。導電性反射防止膜は、マイクロレンズの表面に設けられ、屈折率がマイクロレンズの屈折率よりも高い。低屈折率反射防止膜は、導電性反射防止膜の表面に設けられ、屈折率が空気の屈折率よりも高く、且つ、マイクロレンズの屈折率よりも低い。【選択図】図4
Bibliography:Application Number: JP20190043816