VERTICAL RESONANCE TYPE SURFACE EMISSION LASER, AND METHOD FOR MANUFACTURING VERTICAL RESONANCE TYPE SURFACE EMISSION LASER

• Main Authors: YOSHIMOTO SUSUMU, SUMITOMO TAKAMICHI, TANAHASHI TOSHIYUKI, NISHIZUKA KOJI, ISHIZUKA TAKASHI, FUJII KEI, ARIKATA SUGURU
• Format: Patent
• Language: English; Japanese
• Published: 13.06.2019
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

To provide a vertical resonance type surface emission laser that shows the increased reliability.SOLUTION: A vertical resonance type surface emission laser 11 comprises: a substrate 13 having a principal face including a III-V compound semiconductor including Ga and As as a constituting element; and a post 15 provided on the principal face of the substrate 13. The post 15 comprises: a downside spacer region 17 including a III-V compound semiconductor containing Ga and As as a constituting element; and an active layer 19 having a carbon concentration in a range of 2×10cmor more and 5×10cmor less, and having a quantum well structure provided over the downside spacer region 17. The quantum well structure includes: a well layer 19a having a III-V compound semiconductor containing In as a Group III element; and a barrier layer 19b having a III-V compound semiconductor containing Al and Ga as a Group III element. The downside spacer region 17 is provided between the substrate 13 and the active layer 19.SELECTED DRAWING: Figure 1 【課題】向上された信頼性を示す垂直共振型面発光レーザを提供する。【解決手段】垂直共振型面発光レーザ１１は、構成元素としてＧａ及びＡｓを含むＩＩＩ−Ｖ化合物半導体を備える主面を有する基板１３と、前記基板１３の前記主面上に設けられたポスト１５と、を備え、前記ポスト１５は、構成元素としてＧａ及びＡｓを含むＩＩＩ−Ｖ化合物半導体を備える下部スペーサ領域１７と、２×１０１６ｃｍ−３以上５×１０１６ｃｍ−３以下の範囲の炭素濃度を有し前記下部スペーサ領域１７上に設けられた量子井戸構造を有する活性層１９と、を備え、前記量子井戸構造は、ＩＩＩ族元素としてＩｎを含むＩＩＩ−Ｖ化合物半導体を備える井戸層１９ａと、ＩＩＩ族元素としてＡｌ及びＧａを含むＩＩＩ−Ｖ化合物半導体を備える障壁層１９ｂとを含み、前記下部スペーサ領域１７は、前記基板１３と前記活性層１９との間に設けられる。【選択図】図１