TUNNEL MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND INCORPORATED MEMORY

To provide a TMR element capable of suppressing input of excessive current into a magnetic tunnel junction.SOLUTION: A TMR element includes: a magnetic tunnel junction; a side wall covering a side face of the magnetic tunnel junction; and a fine particle region provided in the side wall. The side wa...

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Bibliographic Details
Main Authors SASAKI TOMOO, TANG ZHENYAO
Format Patent
LanguageEnglish
Japanese
Published 06.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a TMR element capable of suppressing input of excessive current into a magnetic tunnel junction.SOLUTION: A TMR element includes: a magnetic tunnel junction; a side wall covering a side face of the magnetic tunnel junction; and a fine particle region provided in the side wall. The side wall includes an insulating material, and the fine particle region includes the insulating material and a plurality of metal fine particles dispersed in the insulating material, the fine particle region being electrically connected in parallel with the magnetic tunnel junction.SELECTED DRAWING: Figure 4 【課題】磁気トンネル接合部への過大電流の入力を抑制できるＴＭＲ素子を提供する。【解決手段】ＴＭＲ素子は、磁気トンネル接合部と、磁気トンネル接合部の側面を覆う側壁部と、側壁部内に設けられた微粒子領域と、を備え、側壁部は、絶縁材料を含み、微粒子領域は、上記絶縁材料と、当該絶縁材料内に分散された複数の金属微粒子とを含み、微粒子領域は、磁気トンネル接合部と電気的に並列接続される。【選択図】図４
Bibliography:Application Number: JP20180179379