PLASMA ETCHING METHOD
To avoid an etching stop attributed to metal scattered from a metal-containing mask.SOLUTION: A plasma etching method comprises: a protection film forming step of forming, by a first process gas, a protection film on a metal-containing film formed over a film to be etched and having a given opening...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
06.06.2019
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Subjects | |
Online Access | Get full text |
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Summary: | To avoid an etching stop attributed to metal scattered from a metal-containing mask.SOLUTION: A plasma etching method comprises: a protection film forming step of forming, by a first process gas, a protection film on a metal-containing film formed over a film to be etched and having a given opening pattern; and an etching step of etching, by plasma of a second process gas, the film to be etched, using the metal-containing film with the protection film formed thereon as a mask.SELECTED DRAWING: Figure 2
【課題】金属含有マスクから飛散する金属に起因したエッチングストップを回避する。【解決手段】プラズマエッチング方法は、エッチング対象膜上に形成された所定の開口パターンを有する金属含有膜に対して、第1の処理ガスにより保護膜を形成する保護膜形成工程と、保護膜が形成された金属含有膜をマスクとして、第2の処理ガスのプラズマによりエッチング対象膜をエッチングするエッチング工程とを含む。【選択図】図2 |
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Bibliography: | Application Number: JP20170214313 |