SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND LIGHT-EMITTING DEVICE

To provide a semiconductor element capable of irradiating a wide range with light when used for a light-emitting device.SOLUTION: A semiconductor element 1 comprises: an isotropic graphite 2; and a crystalline gallium nitride layer 3 provided on the isotropic graphite 2.SELECTED DRAWING: Figure 1 【課...

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Main Authors INOUE TAKASHI, SAJIKI GO, OKUNI TOMOYUKI, OKANO HIROSHI, HOSOKAWA TOSHIHIRO
Format Patent
LanguageEnglish
Japanese
Published 06.06.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:To provide a semiconductor element capable of irradiating a wide range with light when used for a light-emitting device.SOLUTION: A semiconductor element 1 comprises: an isotropic graphite 2; and a crystalline gallium nitride layer 3 provided on the isotropic graphite 2.SELECTED DRAWING: Figure 1 【課題】発光デバイスに用いたときに、広範囲に光を照射することを可能とする、半導体素子を提供する。【解決手段】等方性黒鉛２と、等方性黒鉛２上に設けられた結晶性窒化ガリウム層３と、を備える、半導体素子１。【選択図】図１
Bibliography:Application Number: JP20170212513